Chemical deposition of normalPbS from aqueous solutions has been studied using a reaction of normalPbSfalse(NO3)2 and CSfalse(NH2)2 with excess normalNaOH . The growth rate was measured as a function of temperature and concentrations of normalNaOH and CSfalse(NH2)2 using glass substrates. It is found that the incubation time depends on temperature and CSfalse(NH2)2 concentration. Epitaxial growth of normalPbS on Ge(100) and normalInPfalse(100false) substrates is confirmed by means of the Laue back reflection x‐ray and the electron channeling patterns. The best surface morphology is obtained on the epitaxial film grown on normalInPfalse(100false) substrate at 298 K with the concentrations of normalNaOH and CSfalse(NH2)2 at 0.57 and 0.4 M/liter, respectively.

Epitaxially grown Cr(N,O) thin films were prepared on MgO substrates, with a misfit of ¹1.7% with respect to CrN, using pulsed laser deposition. X-ray diffraction patterns showed the peak for the (200) reflection of Cr(N,O) around the peak for the (200) reflection of MgO. The X-ray diffraction pattern of the ¤ scan for the (111) reflection of Cr(N,O) showed a narrow peak appearing every 90 degrees. From microstructural observations, grain boundaries in the thin films could not be confirmed. In order to evaluate the oxidation behavior of Cr(N,O) thin films, oxidation tests in air were carried out. After the oxidation tests, a Cr 2 O 3 phase was formed at 873 K and the B1 (NaCl-type) phase disappeared at 1173 K. In the thin film oxidized at 1073 K, a Cr 2 O 3 layer on the surface of the thin film as well as a compositional gradient of oxygen were observed. This indicates that Cr(N,O) hard coatings can form oxidation barrier layers to extend the lifetime of cutting tools.

Chromium oxynitride Cr(N,O) thin films were prepared by pulsed laser deposition in a highly reactive atmosphere, which consisted of pure oxygen gas and nitrogen plasma from a radio-frequency radical source. In order to control the oxygen content in the thin films, oxygen partial pressure (P O2 ) in the chamber was varied from 5 to 10 © 10 ¹5 Pa under a fixed total pressure of 1.5 © 10 ¹2 Pa. The thin films were then characterized by X-ray diffraction, infrared spectroscopy, electron energy loss spectroscopy and nano-indentation testing. It was found that the oxygen content of the thin films changed from 0 to 62 mol% with increasing P O2 . The thin films with only the NaCl-type (B1) Cr(N,O) phase were prepared under P O2 < 7.5 © 10 ¹5 Pa. The chromium content of the B1 phase decreased from 47 mol%, which was close to the stoichiometric composition of CrN, to 40 mol% when the oxygen content was increased. The hardness increased up to 32 GPa with increasing P O2 up to 7.5 © 10