In computation of full-parallax computer-generated hologram (CGH), balance between speed and memory usage is always the core of algorithm development. To solve the speed problem of coherent ray trace (CRT) algorithm and memory problem of look-up table (LUT) algorithm without sacrificing reconstructed object quality, we develop a novel algorithm with split look-up tables (S-LUT) and implement it on graphics processing unit (GPU). Our results show that S-LUT on GPU has the fastest speed among all the algorithms investigated in this paper, while it still maintaining low memory usage. We also demonstrate high quality objects reconstructed from CGHs computed with S-LUT on GPU. The GPU implementation of our new algorithm may enable real-time and interactive holographic 3D display in the future.

The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. Phase-change materials are highly promising in this respect. However, their contradictory speed and stability properties present a key challenge towards this ambition. We reveal that as the device size decreases, the phase-change mechanism changes from the material inherent crystallization mechanism (either nucleation- or growth-dominated), to the hetero-crystallization mechanism, which resulted in a significant increase in PCRAM speeds. Reducing the grain size can further increase the speed of phase-change. Such grain size effect on speed becomes increasingly significant at smaller device sizes. Together with the nano-thermal and electrical effects, fast phase-change, good stability and high endurance can be achieved. These findings lead to a feasible solution to achieve a universal memory.

Phase-change random access memory cells with superlattice-like (SLL) GeTe/Sb(2)Te(3) were demonstrated to have excellent scaling performance in terms of switching speed and operating voltage. In this study, the correlations between the cell size, switching speed and operating voltage of the SLL cells were identified and investigated. We found that small SLL cells can achieve faster switching speed and lower operating voltage compared to the large SLL cells. Fast amorphization and crystallization of 300 ps and 1 ns were achieved in the 40 nm SLL cells, respectively, both significantly faster than those observed in the Ge(2)Sb(2)Te(5) (GST) cells of the same cell size. 40 nm SLL cells were found to switch with low amorphization voltage of 0.9 V when pulse-widths of 5 ns were employed, which is much lower than the 1.6 V required by the GST cells of the same cell size. These effects can be attributed to the fast heterogeneous crystallization, low thermal conductivity and high resistivity of the SLL structures. Nanoscale PCRAM with SLL structure promises applications in high speed and low power memory devices.

One of the best strategies for achieving faster computers is to mitigate the millisecond-order time delays arising from the transfer and storage of information between silicon-and magnetic-based memories. Segregating-binaryalloy (SBA)-type phase-change materials (PCMs), such as gallium antimonide-based systems, can store information on 10 ns time scales by using a single memory structure; however, these materials are hindered by the high consumption of energies and undergo elemental segregation around 620 K. Nanowire-like PCMs can achieve low-energy consumption but are often synthesized by vapor−liquid−solid methods above 720 K, which would cause irreversible corruption of SBA-based PCMs. Here we control the morphology, composition, and functionality of SBA-type germanium− tin oxide systems using template-driven nucleation that leverages the electrostatic-binding specificity of the M13 bacteriophage surface. A wirelike PCM was achieved, with controllable and reliable phase-changing signatures, capable of tens of nanoseconds switching times. This approach addresses some of the critical material compositional and structural constraints that currently diminish the utility of PCMs in universal memory systems.

Recently, scanning probe microscope (SPM) has become a promising technique for nanofabrication. In this paper, we present a novel method of nano-fabrication, namely, nano-fabrication by atomic force microscope (AFM) tips under laser irradiation. The SPM was operated as an AFM. During imaging and nano-fabrication, the AFM is in constant force mode. The tip is fixed with the sample moving via a tube scanner. Nano-lithography software controls the scanner motion in x and y directions. The SPM has an open architecture allowing an external laser beam incident on the tip at an incident angle between 0 to 45 • . A vertically-polarized Nd:YAG pulsed laser with a pulse duration of 7 ns was focused on the tip. An electrical shutter was introduced to switch the laser irradiation. Alignment between the laser beam and the tip was performed under a high-power charge coupled device (CCD) microscope. The kinetics of the nanostructure fabrication has been studied. Craters were created in air ambient under different laser pulse numbers, pulse energies and tip force. The feature size of the craters, which are in the nanometer scale, increases with the pulse number, pulse energy and the tip force. This technique has potential applications in nano-lithography and high-density data storage.