we could see both of Fig.1 and Fig.2 only have the difference at the part of signal processing. This paper described how to use conductive atomic force Laser

Scanning capacitance microscopy (SCM) is a 2-D carrier and/or dopant concentration profiling technique under development that utilizes the excellent spatial resolution of scanning probe microscopy. However, PV-SCM has limited capability to achieve the goal due to inherent "plane" trait. On top of that, deeper concentration profile just like deep N-well is also one of restrictions to use. For representing above contents more clearly, this paper presents a few cases that demonstrate the alternated and optimized application of PV-SCM and X-SCM. The case studies concern Joint Test Action Group failure and stand-by failure. These cases illustrate that the correct selection from either plane-view or cross-sectional SCM analysis according to the surrounding of defect could help to exactly and rapidly diagnose the failure mechanism. Alternating and optimizing PV-SCM and X-SCM techniques to navigate various implant issue could provide corrective actions that suit local circumstance of defects and identify the root cause.