The Hysteresis effects can be suppressed in flexible thin-film transistors with poly (vinyl alcohol) insulator without crosslinking agent. The characteristic of hysteresis was greatly reduced by SiO 2 nano-particle in PVA solution. The TFTs were fabricated by using a-IGZO as active layer at room temperature. The TFTs exhibited stable performance with field effect mobility (~10.81 Vs/cm 2 ), high on/off current ratios (~10 6 ), and low threshold voltage (~-1V) on planarized stainless steel substrate. The transfer curve which measured from various sweep ranges in two different sweep directions suggested that the hysteresis has been successfully suppressed.

The oxygen plasma post‐treatment was adopted for alignment preparation in Ar plasma alignment process. The light leakage at the dark state was suppressed by the new treatment. The NEXAFS data suggested that the out of plane carbonyl groups have been regenerated under oxygen plasma post‐treatment. The polar anchoring energy was two times increased comparing to the Ar treated PI. The cell's EO properties by new plasma treatment were comparable to the rubbed PI surface.