A highly reliable ultra-high gas barrier (UGB) was developed and applied on the fabrication of 4.3-inch flexible AMOLED. The water vapor transmission rate of the UGB on flexible substrate could achieve ~ 10 -6 g/m 2 -day under a calcium test (60 C and 90%RH). In addition, a delamination method to remove the flexible AMOLED from the glass carrier was proposed where the mechanical strain during the delamination is controlled within 0.2%. With the incorporation of a metallic interlayer, the damage of TFT due to the electrostatic discharges from the delaminated surfaces can be prevented.

The products phase-segregate into a cable-like radial heterostructure composed of a core of CaCl 2 and a shell of SiC x H y . After removal of the CaCl 2 core, the layer of polycrystalline SiC tubes on Si can emit electrons at a low applied field of 2.5 V/µm with a current of 10 µA/cm 2 .

In this paper, we introduced nanocomposite materials as a debonding layer (DBL) in the fabrication of flexible displays. These materials provided flexible substrate with good debonding capability even after 450 o C low-temperature poly-silicon (LTPS) process. The effect of temperature on debonding force of flexible substrate was investigated. Besides, some characteristics of thin-film transistors (TFT) were also studied.

In flexible display fabrication, removing the flexible substrate from the rigid carrier glass, without damaging the OLED or the TFT devices, is considered difficult. This particular manufacturing process is referred to as the de‐bonding process. This report provides a simple method to attain a de‐bonding layer which can be applied in a very high temperature process over 450°C. The range of peeling force after the array process can be adapted from 4 to 20 gf.