Harnessing techniques from analog signal processing, we establish a new path for large-scale quantum computation.

We describe and implement a family of entangling gates activated by radio-frequency flux modulation applied to a tunable transmon that is statically coupled to a neighboring transmon. The effect of this modulation is the resonant exchange of photons directly between levels of the two-transmon system, obviating the need for mediating qubits or resonator modes and allowing for the full utilization of all qubits in a scalable architecture. The resonance condition is selective in both the frequency and amplitude of modulation and thus alleviates frequency crowding. We demonstrate the use of three such resonances to produce entangling gates that enable universal quantum computation: one iSWAP gate and two distinct controlled Z gates. We report interleaved randomized benchmarking results indicating gate error rates of 6% for the iSWAP (duration 135ns) and 9% for the controlled Z gates (durations 175 ns and 270 ns), limited largely by qubit coherence.A central challenge in building a scalable quantum computer with superconducting qubits is the execution of high-fidelity, two-qubit gates within an architecture containing many resonant elements. As more elements are added, or as the multiplicity of couplings between elements is increased, the frequency space of the design becomes crowded and device performance suffers. In architectures composed of transmon qubits [1], there are two main approaches to implementing two-qubit gates. The first utilizes fixed-frequency qubits with static couplings where the two-qubit operations are activated by applying transverse microwave drives [2][3][4][5][6][7][8]. While fixedfrequency qubits generally have long coherence times, this architecture requires satisfying stringent constraints on qubit frequencies and anharmonicities [5,6,8] which requires some tunability to scale to many qubits [9]. The second approach relies on frequency-tunable transmons, and two-qubit gates are activated by tuning qubits into and out of resonance with a particular transition [10][11][12][13][14][15][16]. However, tunability comes at the cost of additional decoherence channels, thus significantly limiting coherence times [17]. In this approach the delivery of shaped unbalanced control signals poses a challenge [15]. Such gates are furthermore sensitive to frequency crowdingavoiding unwanted crossings with neighboring qubit energy levels during gate operations limits the flexibility and connectivity of the architecture.An alternative to these approaches is to modulate a circuit's couplings or energy levels at a frequency corresponding to the detuning between particular energy levels of interest [18][19][20][21][22][23][24][25][26]. This enables an entangling gate between a qubit and a single resonator [21,22], a qubit and many resonator modes [26], two transmon qubits coupled by a tunable mediating qubit [16,25], or two tunable transmons coupled to a mediating resonator [23,24].Building on these earlier results, we implement two entangling gates, iSWAP and controlled Z (CZ), between a flux-tunable transmon an...

Enabling applications for solid state quantum technology will require systematically reducing noise, particularly dissipation, in these systems. Yet, when multiple decay channels are present in a system with similar weight, resolution to distinguish relatively small changes is necessary to infer improvements to noise levels. For superconducting qubits, uncontrolled variation of nominal performance makes obtaining such resolution challenging. Here, we approach this problem by investigating specific combinations of previously reported fabrication techniques on the quality of 242 thin film superconducting resonators and qubits. Our results quantify the influence of elementary processes on dissipation at key interfaces. We report that an end-to-end optimization of the manufacturing process that integrates multiple small improvements together can produce an average T 1 = 76 ± 13 µs across 24 qubits with the best qubits having T1 ≥ 110 µs. Moreover, our analysis places bounds on energy decay rates for three fabrication-related loss channels present in state-ofthe-art superconducting qubits. Understanding dissipation through such systematic analysis may pave the way for lower noise solid state quantum computers.

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Planar (In,Ga)N layers were grown on nanostripe arrays composed of InGaN/GaN multi quantum wells (MQWs) by metal-organic chemical vapor deposition. The MQW nanostripe arrays with height to width aspect ratios of about 0.5 and 1 were fabricated from planar coherently strained InGaN/GaN MQW samples. Independent of their aspect ratio, the nanostripes exhibited elastic relaxation perpendicular to the stripe direction after pattern fabrication, resulting in an a ⊥ lattice constant perpendicular to the stripe direction larger than that of the GaN base layer. In a subsequent step, (In,Ga)N layers were grown on top of the nanostripe arrays, leading to the formation of planar films with a similar a ⊥ lattice constant as the MQW stripes beneath. Bright luminescence was recorded from the planar, partially relaxed re-grown (In,Ga)N layers grown on the stripe arrays with an aspect ratio of 1. Plastic relaxation of the MQW stripes was observed after (In,Ga)N regrowth for samples with a stripe aspect ratio of 0.5, leading to luminescence quenching.