Highly c-axis-oriented LiNbO3(006) thin films were successfully grown on SiO2/Si substrates with a ZnO buffer layer by XeCl excimer pulsed laser deposition (PLD). The as-deposited films were characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy to analyze their crystalline structure and surface morphology. The results show that the highly c-axis-oriented LiNbO3 thin films of 2.5 µm thickness were successfully grown on SiO2/Si substrates with a ZnO buffer layer by PLD. The full width at half maximum intensity of the LiNbO3(006) peak of the sample fabricated under the optimum deposition conditions is only 0.18°. The center frequency of the LiNbO3/ZnO/SiO2/Si substrate with line width of 4 µm is 188 MHz, and the phase velocity is 3010 m/s, which is slightly lower than that of the 36° Y–X LiNbO3 substrate.

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ZnO films with c-axis (0002) orientation have been successfully grown by RF magnetron sputtering on interdigital transducers (IDTs)/Al 2 O 3 /glass substrates. The alumina films were deposited on glass substrates by electron beam evaporation. The phase velocity, coupling coefficient and temperature coefficient of frequency (TCF) of SAW device were increased when we increased the thickness of alumina film. The experimental result is beneficial to upgrade the performance of the ZnO thin film SAW devices on cheap glass substrate.

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