Growth of c-Axis-Oriented LiNbO₃ Films on ZnO/SiO₂/Si Substrate by Pulsed Laser Deposition for Surface Acoustic Wave Applications

Abstract

Highly c-axis-oriented LiNbO3(006) thin films were successfully grown on SiO2/Si substrates with a ZnO buffer layer by XeCl excimer pulsed laser deposition (PLD). The as-deposited films were characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy to analyze their crystalline structure and surface morphology. The results show that the highly c-axis-oriented LiNbO3 thin films of 2.5 µm thickness were successfully grown on SiO2/Si substrates with a ZnO buffer layer by PLD. The full width at half maximum intensity of the LiNbO3(006) peak of the sample fabricated under the optimum deposition conditions is only 0.18°. The center frequency of the LiNbO3/ZnO/SiO2/Si substrate with line width of 4 µm is 188 MHz, and the phase velocity is 3010 m/s, which is slightly lower than that of the 36° Y–X LiNbO3 substrate.

Oxygen Pressure Influence on Properties of Nanocrystalline LiNbO3 Films Grown by Laser Ablation

“…Recently, a large number of publications have been devoted to the synthesis of lithium niobate films and structures based on it [ 32 , 33 , 34 , 35 ]. However, requirements for the structure, morphology, and properties of LiNbO 3 films are formulated only in the ‘first approximation’ [ 29 ].…”

Optical investigations of photonics lithium niobate

“…Both pyroelectric crystals have high Curie temperature, excellent chemical and mechanical stability and high damage threshold that is very important for high-precision measurements of power laser radiation where high stability, durability and radiation stability are necessary (Shih et al, 2008). Because of its remarkable linear and nonlinear optical properties, chemical and mechanical stability makes lithium niobate (LN) an attractive host material for application in photonic crystal devices (Gesualdi et al, 2008).…”

Deposition of stress free c-axis oriented LiNbO3 thin film grown on (002) ZnO coated Si substrate

“…INTRODUCTION Lithium niobate has been one of the most promising ferroelectric materials because of its high piezoelectric, photorefractive, electro-optic (EO), and nonlinear optical properties 1,2 and has potential applications in variety of devices including wave guides, surface acoustic wave devices, acousto-optic, frequency conversion, optical switches, optical modulators, multiplexers, and others. [3][4][5][6][7][8][9][10][11][12] Efforts are continuing towards the growth of crystalline LiNbO 3 thin films due to their advantage over the bulk LiNbO 3 especially on the Si substrate for the realization of integrated functional devices. 8 Deposition of c-axis oriented LiNbO 3 thin film is of special interest because of its high electro-optic and nonlinear optical properties besides good piezoelectric properties along this crystallographic direction.…”

“…8 Deposition of c-axis oriented LiNbO 3 thin film is of special interest because of its high electro-optic and nonlinear optical properties besides good piezoelectric properties along this crystallographic direction. [8][9][10][11][12] However, a suitable buffer layer (i.e., SiO 2 , Si 3 N 4 /SiO 2 , and ZnO) is essentially required for the growth of preferred oriented LiNbO 3 thin film on Si substrate. 9,12,13 Recently, we deposited the single phase and c-axis oriented LiNbO 3 thin film using (002) oriented ZnO buffer layer by pulsed laser deposition (PLD) technique, however, the films were found to be in the state of stress.…”

“…[8][9][10][11][12] However, a suitable buffer layer (i.e., SiO 2 , Si 3 N 4 /SiO 2 , and ZnO) is essentially required for the growth of preferred oriented LiNbO 3 thin film on Si substrate. 9,12,13 Recently, we deposited the single phase and c-axis oriented LiNbO 3 thin film using (002) oriented ZnO buffer layer by pulsed laser deposition (PLD) technique, however, the films were found to be in the state of stress. 9,13 Various deposition techniques are being used to grow highly c-axis oriented LiNbO 3 thin films but rf sputtering is found to be the most suitable deposition technique due to better control over stoichiometry and relatively lower processing temperature.…”