An analysis of the use of semiconductor solar cells based on thin-film cadmium telluride (CdTe) in power engineering is carried out. It is shown that the advantages of thin-film technology and CdTe itself as a direct-gap semiconductor open up the prospect of large-scale production of competitive CdTe solar modules. The physical and technical problems of increasing the efficiency of CdS/CdTe heterostructure solar cells, which are significantly inferior to the theoretically possible value in mass production, are discussed. The state of CdTe thin-film solar cells, which make CdTe a suitable material for ground-based photoelectric conversion of solar energy, the historical development of the CdTe compound, the application of CdTe thin films, the main methods and strategies of device production, device analysis and fundamental problems related to the future development of thin-film modules based on cadmium telluride.

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Equations are proposed for quasi-chemical reactions leading to the formation of intrinsic and impurity defects and defect complexes in Cl-doped cadmium telluride crystals during annealing in cadmium vapor at different temperatures. The equilibrium constants for the formation of ( )defect complexes and antisite defects are calculated. An analytical expression is derived for the cadmium partial pressure corresponding to a type conversion. The conditions are established for producing n -and p -type CdTe 〈 Cl 〉 crystals with controlled carrier concentration. Cl Te + V Cd 2-Te Cd 2+

In this work, a high-accuracy setup was developed for the characterization of thermoelectric devices in the temperature range of 300-900 K. The output parameters of the thermoelectric devices, including the thermoelectric efficiency Z, Seebeck coefficient S, and internal resistance r, were measured. A technique, block diagram, and computer tools for automated measurement and preliminary processing of experimental data were developed for automated studies of the properties of semiconductor materials and thermoelectric power conversion modules. The developed tools were shown to have high efficiency. The complexity of the process of measuring the main electrical parameters of semiconductor materials was significantly reduced, and the accuracy of the obtained results was increased.