Scanning transmission X-ray microscopes (STXM) are well matched to the optics of high resolution monochromators, offer a variety of imaging modes and can minimize radiation damage to the specimen. We describe the Stony Brook STXM at the NSLS. This microscope is used for a variety of studies by many users; we briefly outline its use for studies of hydrated colloidal systems and for dark field microscopy on immunogold labeled specimens as examples. In order to keep pace with developments in zone plate optics, spectroscopy and a variety of imaging modalities, the microscope is being redesigned and its characteristics are discussed. Its primary x-ray detector will be a new multiwire proportional counter with high count rate capability.

It is demonstrated that in a zone plate based scanning X-ray microscope, used to image low absorbing, heterogeneous matter at a mesoscopic scale, differential phase contrast (DPC) can be implemented without adding any additional optical component to the normal scheme of the microscope. The DPC mode is simply generated by an appropriate positioning and alignment of microscope apertures. Diffraction from the apertures produces a wave front with a non-uniform intensity. The signal recorded by a pinhole photo diode located in the intensity gradient is highly sensitive to phase changes introduced by the specimen to be recorded. The feasibility of this novel DPC technique was proven with the scanning X-ray microscope at the ID21 beamline of the European Synchrotron Radiation facility (ESRF) operated at 6 keV photon energy. We observe a differential phase contrast, similar to Nomarski's differential interference contrast for the light microscope, which results in a tremendous increase in image contrast of up to 20 % when imaging low absorbing specimen.

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A new method for the actinic at-wavelength inspection of defects inside and ontop of Extreme Ultraviolet Lithography (EUVL) multilayer-coated mask blanks is presented. The experimental technique is based on PhotoElectron Emission Microscopy (PEEM) supported by the generation of a standing wave field inside and above the multilayer mask blank when illuminated near the resonance Bragg wavelength at around 13.5 nm wavelength. Experimental results on programmed defect samples based on e-beam lithographic structures or PSL equivalent silica balls overcoated with an EUV multilayer show that buried defects scaling down to 50 nm in lateral size are detectable with further scalability down to 30 nm and smaller due to the PEEM´s instrumental performance. Furthermore, phase structures as shallow as 6 nm in height on a programmed phase grating sample has been detected by this technique. The visibility of the phase defect structures has been shown to be strongly dependent on and controlled by the phase of the standing wave field at the mask blank surface and thus can be optimized by tuning the illumination wavelength between 12.5 nm and 13.8 nm.

A new method for the actinic inspection of defects inside and on top of extreme ultraviolet (EUV) lithography multilayer-coated mask blanks is presented. The experimental technique is based on photoemission electron microscopy supported by the generation of a standing wave field inside and above the multilayer mask blank when illuminated near the resonance Bragg wavelength at around 13.5nm. Experimental results on programed defect samples based on electron beam lithographic structures or silica balls overcoated with an EUV multilayer show that buried defects with a lateral size down to 50nm are detectable. Furthermore, phase structures as shallow as 6nm in height on a programed phase grating sample have been detected by this technique. The contrast of the phase defect structures has shown to be strongly dependent on and controlled by the phase of the standing wave field at the mask blank surface, and thus can be optimized by tuning the inspection wavelength.