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No abstract

The stabilization of highly reactive amide complexes of zirconium diethylamide with malonates as chelating ligands leads to a stable six-coordinated monomeric complex which shows promise for CVD applications. This novel precursor, zirconium bis-, has been characterized and tested in a productiontype MOCVD reactor for ZrO 2 thin-film deposition. Up to 450°C, the ZrO 2 films are amorphous, and above 475°C films they are crystalline. Atomic force microscopy (AFM) shows a lower roughness (∼2.5Å) for as-deposited amorphous films compared to crystalline films (∼6.0 Å); however, smooth crystalline films can be obtained by post-deposition annealing of amorphous films. Electrical properties are investigated for Pt/ZrO 2 /SiO x /Si capacitor structures. Relative dielectric permittivity reaches a bulk value of 24, and leakage currents for typically 4 nm thick films are below 10 -4 A cm -2 at a bias of -1 V.Hence, the precursor shows promising properties for possible application in the deposition of high-k gate oxide (MIS) and high-k dielectric (MIM) structures.

No abstract