The temperature coefficients of the refractive indices of Ge, Si, InAs, GaAs, InP, GaP, CdSe, ZnSe, and ZnS are\ud measured by a prism technique in spectral ranges of up to X = 1 2 ,um at 15-350 C. Numerical values of equivalent oscillator\ud parameters describing the n(X) dispersion, as well as the high-frequency e and low-frequency eo dielectric\ud constants, are determined with precision. Taking into account the band structure of the above semiconductors, the\ud values dn/dT have been calculated and show good agreement with experimental data

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