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Low specific contact resistivity (7E-9 Ohm.cm 2 ) was achieved for contacts with TiSi x to in-situ epitaxially doped Si:P n-SD regions by use of Se implantation prior to Ti deposition. The key to this achievement is the optimization of implant energy and dose, and use of millisecond laser anneal to heal the implant damage, while allowing sufficient inter-mixing of Ti, Si, Se and P atoms across a smooth TiSi x /Si:P interface, to realize the SBH-lowering benefits of Se.