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The majority of works on post-irradiation exo-electron emission a r e carried out with the use of ultraviolet and X-rays, r-quanta, electrons, and particles.The study of exo-emission after proton irradiation causing the appearance of a great number of point defects and their complexes is of great interest.The subjects of investigation were n-type silicon, doped with phosphorus and n-type germanium doped with antimony. The irradiation with protons of 600 keV energy (beam density 1013 cm generator through an ion-conductor joined to the operating vacuum chamber (5x x10 Just after the irradiation the sample was turned together with the table and was installed in front of the entry window of a secondary electron multiplier. The temperature of the sample during irradiation (120 C) and the subsequent thermostimulation was controlled by a chromel-alumel thermocouple shielded from the proton beam.Exo-emission was registered at linear heating to 450 C (0.25 deg/s) and simultaneous illumination with light of wavelength 280 nm, which was focused on a spot with area of 6 mm of the irradiated part of the sample. Typical glow curves of exo-emission ( Fig. 1 and 2) reveal two pronounced peaks: of low temperatures (135 to 140 C for Ge and 170 to 175 OC for Si) and at high temperatures (320 C for Ge and 380 C for Si). The intensity of the emission maximum increases slightly with the increase of the irradiation dose. The activation energy of exo-emission estimated according to Balarin and Zetzsche (1) was 0.4 and 0 . 6 eV for Si and 0 . 6 and 0.9 for Ge for the low and high temperature regions of anneling, respectively. -2 -1 s ) was accomplished with an electrostatic -5 Torr). The time of irradiation was varied within the limits of 30 to 240 min. 0 0 2 0 0 0It should be noted that the high temperature maximum can only be seen with illumination, but the low temperature peak is reproduced in darkness. The different behaviour of the two annealing regions for silicon can also be seen under repeated