The diffusion coefficients of hydrogen in β‐zirconium were calculated from experimental hydrogen sorption curves. The results were D false(cm2/secfalse)=5.32×10−3expfalse(−8320/RTfalse) , (760°–1010°C). This relationship was independent of hydrogen concentrations (to 41 a/o H) and oxygen concentrations (to 4.2 a/o O) in β ‐zirconium. Oxygen in solid solution with zirconium and surface films on the zirconium reduced the rate of hydrogen sorption by zirconium. The effect of oxygen in solid solution with zirconium was observed to be related to the α to β transformation, while the effect of surface films was related to the hydrogen concentration at the film ‐zirconium interface.

Significant improvements in gain and energy resolution are reported for very-large-area p-n-junction-type silicon avalanche radiation detectors which were made from neutron-doped silicon. Detectors with frontal areas of about 20 mm2 had gains which ranged from 400 (1.2 keV FWHM at 5.9 keV) to over 800 (2.2 keV FWHM at 5.9 keV). A 330-mm2 device showed a maximum gain of 150 with an energy resolution of 16 keV FWHM at 22 keV.

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