No abstract

It is observed froni the studies of electrical resistivity of films of SnSe of different thicknesses and substrate temperatures that resistivity decreases with increase in thickness and substrate temperature. The study of variation in band gap with thickness shows a linear relationship between band gap and l/t2. Finally, band gap -substrate temperature studies show that the band gap increases with substrate temperature.

The deformation characteristics of KC10, single crystals have been studied by the methods of static and dynamic indentation on (001) plane. The cracks produced by the dynamic indentation have been interpreted in terms of slip-twin interactions. Also, the load dependence of Vickers microhardness and its anisotropy in this crystal are reported. The observed hardness anisotropy has been used t o confirm the indices of the slip system < l O l )

Variation of Vickers microhardness of InBi single crystals with temperature has been studied. Loading time dependence of the microhardness at different temperatures has been used ~for the creep study in the temperature range 30 °-850C. The activation energy for creep has been evaluated and the results are discussed.

Optical absorption measurements were made on tin diselenide thin films grown on glass substrates by thermal evaporation of stoichiometric bulk compound. In the as-deposited films, optical absorption was dominated by an indirect transition at lower photon energies with a band gap of 1.4eV. The direct allowed transition with a band gap of 1.62 eV was predominant at higher energies. Annealing the film at elevated temperatures resulted in the decrease of both the direct and indirect transition band gaps.