1989
DOI: 10.1016/0022-0248(89)90063-8
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Growth and characterization of SnSe and SnSe2 single crystals

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Cited by 50 publications
(22 citation statements)
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“…One thing should be noted is that this method differs from that of ionic-liquid gating, where no ions migrate into the precursor and thus the SC is confined within surface layers (thickness of ∼ 1 nm) [23,24]. SnSe 2 is an intrinsic semiconductor with a bandgap of 1.0 eV at room temperature [25]. Intercalation of Co(η-C 5 H 5 ) 2 molecule between SnSe 2 layers can induce SC at T c =5 K [26,27].…”
Section: Introductionmentioning
confidence: 99%
“…One thing should be noted is that this method differs from that of ionic-liquid gating, where no ions migrate into the precursor and thus the SC is confined within surface layers (thickness of ∼ 1 nm) [23,24]. SnSe 2 is an intrinsic semiconductor with a bandgap of 1.0 eV at room temperature [25]. Intercalation of Co(η-C 5 H 5 ) 2 molecule between SnSe 2 layers can induce SC at T c =5 K [26,27].…”
Section: Introductionmentioning
confidence: 99%
“…SnS and SnSe single crystals obtained by Bridgman method exhibits p-type conductivity with controllable electrical properties [1] and it crystallises in orthorhombic structure [1]. Although several investigations of the structural, electrical, optical absorption and photoelectric properties of SnS and SnSe single crystals have been carried out [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18], it has been seen only few study on the metal/p-SnS and metal/p-SnSe Schottky diodes [19,20].…”
Section: Introductionmentioning
confidence: 99%
“…Metal chalcogenides with layered structure possess the following criteria to make them potential candidates in photoelectrochemical solar cells: (a) the constituent elements are non-toxic, cheap and abundant in nature leading to the development of devices that are environmentally safe and have public acceptability; (b) the band gap is between 0.9 and 2.0 eV, making them capable of absorbing a major portion of solar energy. This chalcogenides are commonly synthesized by solid-state reaction of the elements at high temperature [3], Bridgman methods [4] and vapour phase method [5], which need high temperature (>550°C), toxic reagents or long reaction time. SnS and SnSe single crystals obtained by Bridgman method exhibits p-type conductivity with controllable electrical properties [1] and it crystallises in orthorhombic structure [1].…”
Section: Introductionmentioning
confidence: 99%
“…Also, a possible complication in using stannous chloride is its tendency to partially hydrolyse and form an insoluble stannous oxychloride (also known as abhurite) at pH above 2:18–20 Tin and selenium can form at least two compounds: stannous and stannic selenide (SnSe and SnSe 2 respectively). Both have been studied for their electronic properties and have been synthesized using several techniques 21–28. However, all methods that involve precipitation of stannous selenide from aqueous solutions proceed via direct reaction of selenide and stannous ions (i.e.…”
Section: Introductionmentioning
confidence: 99%