The luminescence of p-Ge doped both with Ga and As impurities in the region of "intermediate" concentrations ( 10le to 10l8 has been investigated. Potential fluctuations due to random distribution of impurities in a crystal were shown to be the main factor in compensated semiconductors affecting the spectrum of radiative recombination in this region of concentrations. Under conditions of low temperatures and low excitation nonequilibrium carriers localize in close-to-generation-site potential wells. The character of their recombination therewith is similar to inter-impurity recombination with the difference that the carriers are captured not by separate impurity atoms but by their aggregates. The distances between recombination carriers in this case are shown to depend on optimal dimensions of fluctuations rather than on impurity concentration. It has also been shown that at low temperature the energy distribution of non-equilibrium electrons does not correspond to the density-of-states function in the impurity band of donors. ~C C J I e~O B a n a C b JIIOMHHeCUeHUHFI p-Ge, JIerHPOBaHHOrO CO BMeCTHO IIpHMeCFIMH Ga 12 AS B 06JraCTH ,,IIPOMelKyTOYHbIX" KOHIIeHTpaIJHfi A 0 10" CM-3). n o -Ka3aH0, YTO B KOMIIeHCEIPOBaHHOM IIOJlyIlpOBOAHHKe OCHOBHbIM @aKTOpOM, BJIEIFIIO-UZHM H a CIIeIETp H3JIyYaTeJIbHOfi peKOM6HHaIJHH B 3TOfi 06JIaCTH KOHIIeHTpagHfi,

The electronic properties of Ge crystals irradiatcd with fast reactor neutrons are studied in the temperature range 1.7 to 300 K. Sb-, Asand Ga-doped Ge are used as original material. It is found that the activation energy of shallow radiation defect levels is 16 meV in the case of low concentration and compensation. Some deepening of the Fermi level a t a degree of compensation = 0.4 is observed which increases the activation energy of the ( E , + 0.016) eV level. Hopping conductivity between shallow radiation defect levels, ( E , + 0.016) eV, is studied. The conclusion is made that the theory based on the percolation model can be used for accounting for hopping conductivity between these levels. The experimental dependence of the extrapolated resistivity g, on the defect concentration is in agreement-with the hopping conduction theory if the Bohr radius of the defect is assumed to be close t o 40 A. 3JIeKTpO@H3HLIeCHHe CBOfiCTBa HpHCTaJIJIOB I' epMaHHR, 06.11yqeHHOrO 6bICTpbIMH pe-aHTOPHbIMH HeBTpOHaMH, HCCJIeJJOBaJIHCb B HHTepBaJIe TeMIIepaTyp B MbIILIbRKOM HJIH I-aJIJIHeM. Hakineao ,9To 3HeprllX aKTMBaUklPl Mej TICHX YpOBHea PaRkIalfklOH-HbIX Ee@eHTOB, B CJIYqae ManOfi KoHUeHTpaUHH H HOMIleHCaUHH PaBHa 16 meV. OTMeqa-177 TO 300 K . KagecTBe ncxoaHoro MaTepnana H C I I O J I~~O B~J I C R repiwamii nermposaHHbiB CYPbMOB, eTcH HeKoTopoe , ,~~T J I~~J I~H H~' ' YPOBHR §epMH, n p~ menem HoMneHcaqHm = 0,4, KO-Topoe npommeTccI B ysenmeHm a~eprrm awmaumi YPOBHR ( E , + 0,016) eV. M3y-YeHa IIpblFKKOBaR IIPOBOHHMOCTL IIO MeJIHHM YPOBHRM PaEHaUHOHHbIX Ee@eKTOB ( E , + f 0,016) e v . AeJIaeTCR BbIBOn, 9 T O TeOpHfl OCHOBaHHaR Ha MeTORaX IIpOTeKaHHR MOl KeT 6bITb IIpllMeHeHa HJIR 06%fiCHeHHH IIpbIXWOBO~ npOBOREi MOCTH IIO BTHM YPOBHRM. 3KC-IIepHMeHTaJIbHaR 3aBHCHMOCTb 3KCTpaIIOJIHpOBaHHOrO YReJIbHorO COIIPOTMBJIeHHR e3 OT KOHlIeHTpaUMH Ee@eHTOB COrJIaCyeTCR C TeOplleB ~p b I~H O B O~~~p O B O~l l M O C T H , eCJIH BeJIH-qHHy 60pOBCKOrO pannyca ne@eHTa IIpHHRTb 6~1~31<0fi Ic 40 A .

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The dependence of conductivity on electric field and on temperature in heavily doped and strongly compensated liquid-phase epitaxial GaAs layers is investigated. From the dependences on temperature (in low electric fields) and electric field (in strong electric fields) determined experimentally, a localisation radius a and density of states at the Fermi level g&) are determined and the value of the degree of compensation K for 1 -K < 1 is estimated. Good agreement between theory and experiment is obtained.At moderate electric fields qualitative agreement with the existing theoretical models is obtained.

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