Spiked photoconductance and inter-impurity recombination

Dobrego, V. P.; Ryvkin, S.M.

doi:10.1016/0038-1098(64)90416-8

Cited by 2 publications

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“…Calculations of hopping conductivity often take N ( E ) to be constant [16, 171, which would give zero Ao. If N ( E ) were decreasing, one would expect Ao to be negative -as has in fact been observed in compensated crystalline silicon [5]. 5.…”

Section: Modelmentioning

confidence: 79%

“…There is no other choice in intrinsic crystalline material since there are only extended states, and also for most doped [l] and even amorphous [ 2 , 31 semiconductors it is sufficient to think of the localized states introduced into the forbidden gap in terms of traps or recombination centres for carriers in extended states. There are, however, examples of photoconduction by excess carriers which move by hopping from one site to the other : Hopping photoconductivity has been observed in partially compensated c-Ge [4], c-Si [5], and c-GaAs [GI. I n a-Si of the glow-discharge type one portion of the photoconductivity has been explained by hopping conduction in traps below the electron mobility edge [7, …”

Section: Introductionmentioning

confidence: 99%

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Hopping photoconductivity in amorphous germanium

Fischer¹,

Vornholz²

1975

Physica Status Solidi (b)

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The photoconductivity of amorphous germanium is measured as a function of temperature, annealing temperature, and intensity of the incident light. The photocurrent depends only weakly on sample temperature and annealing state, in contrast to the behaviour of the dark current. The dependence of the photocurrent on light. intensity is linear to sublinear. The results are explained by hopping photoconduction of excess carriers around the Fermi level. Results of model calculations are in good qualitative agreement with the experiments.E s wird die Photoleitfahigkeit von amorphem Germanium in Abhangigkeit von der Temperatur, Temperungstemperatur und Intensitst des einfallenden Lichts unt'ersucht. Der Photostrom hBngt nur schwach von der Probentemperatur und dem Temperungszustand ab, im Gegensatz zum Verhalten des Dunkelstroms. Die Abhangigkeit des Photostroms von der Lichtintensitat ist linear bis sublinear. Die Ergebnisse werden mit Hopping-Leitfahigkeit von ifberschuBladungstragern in der Nahe der Fermigrenze erklart. Ergebnisse von Modellberechnungen befinden sich in guter qualitativer nbereinstimmung mit den Experimenten.

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Section: Modelmentioning

confidence: 79%

Section: Introductionmentioning

confidence: 99%

Hopping photoconductivity in amorphous germanium

Fischer¹,

Vornholz²

1975

Physica Status Solidi (b)

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“…In the experimental study of germanium and silicon crystals moderately doped with hydrogen-like impurities in the temperature range of liquid helium, Dobrego and Ryvkin [1,2] introduced the concept of hopping photoconductivity as a change in the magnitude of DC (stationary) hopping electrical conductivity under the influence of optical radiation. When the intrinsic absorption band of crystalline semiconductors is excited by light, 'free' electrons in the c-band and holes in the v-band are created as a result of interband transitions.…”

Section: Introductionmentioning

confidence: 99%

DC hopping photoconductivity via three-charge-state point defects in partially disordered semiconductors

Poklonski¹,

Anikeev²,

Вырко³

2022

Phys. Scr.

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The stationary (DC) hopping photoconductivity caused by the migration of electrons via intrinsic point t-defects of the same type with three charge states (-1, 0, and +1 in units of elementary charge) is theoretically studied. It is assumed that t-defects are randomly (Poissonian) distributed over a crystal and hops of single electrons occur only via t-defects in the charge states (-1), (0) and (0), (+1). Under the influence of intercenter illumination nonequilibrium charge states (-1) and (+1) of defects are generated due to photostimulated electron transitions between pairs of defects in the charge states (0). During the recombination of nonequilibrium charge states (-1) and (+1) of defects, pairs of defects in the charge states (0) are formed. It is assumed that illumination does not heat the crystal, i.e. does not increase the coefficient of thermal ionization of t-defects. The dependence of the ratio of photoconductivity to dark hopping electrical conductivity on the ratio of photoionization coefficient (γ) of neutral t-defects to coefficient of "capture" (α) of an electron from a negatively charged to a positively charged t-defect is calculated. The calculations of hopping photoconductivity were carried out for the partially disordered silicon crystal with total concentration of t-defects of 3·10^19 cm^−3, compensated by shallow hydrogen-like donors. The ratios of donor concentration to t-defect concentration (compensation ratios) are 0.25, 0.5, and 0.75. An electron localization radius on the negatively charged t-defect is assumed to be equal to an average distance between t-defects including donors. The calculated value of the dark hopping electrical conductivity is consistent with the known experimental data. A negative DC photoconduction at γ > α is predicted, due to a decrease in the concentration of electrons hopping via states (-1), (0) and (0), (+1).

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Spiked photoconductance and inter-impurity recombination

Cited by 2 publications

References 0 publications

Hopping photoconductivity in amorphous germanium

Hopping photoconductivity in amorphous germanium

DC hopping photoconductivity via three-charge-state point defects in partially disordered semiconductors

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