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SUMMARYA theoretical framework is established for the investigation of the e!ect of ampli"ed luminescence, non-radiative recombination, photon losses, and gain non-linearity on the threshold current characteristics and small-signal modulation responses of bulk and quantum-well (QW) 1.3 and 1.55 m In V Ga \V As W P \W /InP laser diodes. It is shown that the rate of recombination induced by ampli"ed luminescence exhibits a highly non-linear dependence on both carrier concentration and temperature. Ampli"ed luminescence and Auger recombination increase the laser threshold and contribute strongly to the device threshold current temperature sensitivity. Ampli"ed luminescence and Auger recombination are shown to have a signi"cant detrimental e!ect on the modulation properties of long-wavelength laser diodes.

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