Theoretical analysis of the effect of amplified luminescence on the modulation response of laser diodes

Буров, Л. И.; Gribkovskii, V. P.; Grigelevich, P. S.; Kramar, Maxim; Ryabtsev, G. I.; Shore, K.A.; Voitikov, S. V.; Kragler, Robert

doi:10.1002/jnm.416

Cited by 7 publications

(6 citation statements)

References 16 publications

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“…We describe the dynamics of the concentration N of nonequilibrium carriers using the standard rate equation [12] dN dt…”

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confidence: 99%

“…Amplified luminescence can have a significant effect on the threshold [13] and dynamic [12,14] characteristics of a laser diode, but the calculation of R lum is rather complicated and requires that the properties of the particular heterostructure and geometric parameters of the laser diode be taken into account. Preliminary calculations based on polynomial representation for R lum [12] showed that when the lasing threshold is exceeded by more than a factor of 1.5, the amplified luminescence has no significant effect on the character the polarization switching.…”

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Dynamics of polarization switching in single-mode injection semiconductor lasers

et al. 2010

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UDC 621.373.8 Various dynamic effects during polarization switching in single-mode semiconductor lasers are examined on the basis of a previously developed approach. This model is found to provide a good description of a wide range of experimentally observed phenomena. At the same time, it offers a simple and intuitive interpretation of the nature and character of polarization switching effects that is related to the formation dynamics of the laser radiation. Introduction.Although the sudden switching of the polarization state of the output from semiconductor injection lasers is an effect that has been known for quite a long time [1,2], only recently have the dynamical aspects of this phenomenon been studied in the case of vertical-cavity surface-emitting lasers (VCSEL) [3][4][5][6]. This interest originates in the possible use of VCSEL in optoelectronic systems, while "spontaneous" polarization switching is undesirable in polarization sensitive systems.Dynamic effects in VCSEL are usually studied in terms of a spin-flip model (SFM) [7,8] which contains two coupled spin subsystems that generate circularly polarized orthogonal components. Linearly polarized modes are formed by matching the phases of these components as a consequence of stability conditions [7]. However, the fluctuations in the output radiation increase rapidly in the polarization switching region, and the phase can no longer be regarded as an adequately defined quantity. Thus, in the polarization switching region, partially polarized dynamic states [9] (an incoherent mix of different polarizations) are observed. These things cast doubt on the validity of the SFM for the dynamics of polarization switching in semiconductor injection lasers.In an earlier paper [10] we studied polarization switching effects in a cw single-mode semiconductor injection laser. The polarization component method (PCM) [11] made it possible to relate all the basic features of polarization switching to the formation dynamics for polarized radiation in the active layer of a laser diode. This paper is an analysis of polarization switching dynamics in single-mode semiconductor lasers based on a model using the polarization component method.Theoretical Model. The basis of the theoretical model is the PCM, in terms of which a plane wave field E(z, t) propagating along the z axis is represented in the form of a superposition of polarization components:

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“…We describe the dynamics of the concentration N of nonequilibrium carriers using the standard rate equation [12] dN dt…”

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confidence: 99%

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confidence: 99%

Dynamics of polarization switching in single-mode injection semiconductor lasers

et al. 2010

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“…(1) and GðhnÞ in absolute units it is possible to calculate the spontaneous emission power W sp ðhnÞ in absolute units also. Knowledge of the gain and SE power in absolute units permits determining the spontaneous emission recombination rate R sp ¼ Ð W sp hn ð Þ=hn Â Ã dn, and the recombination rate induced by amplified luminescence R lum [5,6]. Limits on the integral in the R sp expression equal to the appropriate frequency limits of the SE power spectrum.…”

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“…The QðnÞ dependence was evaluated within the temperature interval of 300-463 K using the obtained threshold carrier concentrations. It can be presented by the C Á n 3 function where the coefficient C is about of (1.1-8.8) Â 10 À41 s À1 m 6 . Approximation of QðnÞ for T > 463 K has not been performed because of the above mentioned assumption of a constant n th ðTÞ at T > 463 K. A contribution of the recombination rate induced by the amplified luminescence to Q does not exceed several percent at all temperatures being considered.…”

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“…The sum internal losses at T ¼ 300 K was assumed to be equal to 3500 m À1 as for the AlGaInN laser diodes [8]. It was supposed that the temperature dependence of q for the GaN epilayers under investigation is analogous to qðTÞ for the InGaAsP/InP laser diodes [6]. With the help of (1) the corresponding gain spectral distribution were determined in absolute units also.…”

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Study of Laser Threshold Temperature Sensitivity in Optically Pumped GaN Epilayers

Ryabtsev

Луценко

Ryabtsev

et al. 2002

phys. stat. sol. (c)

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PACS : 78.20.Bh; 78.66.Fd On the base of experimental spontaneous emission spectra measured at laser threshold the temperature dependencies of the radiative R sp and nonradiative Q recombination rates as well as the spontaneous emission internal quantum efficiency h sp for optically pumped wurtzite GaN=Al 2 O 3 epilayers have been calculated. The recombination rate induced by the amplified luminescence R lum was taken into account. It is shown that the main reason of the increasing threshold pump rate R p with temperature T for the GaN-based compounds is a substantial rise of the nonradiative recombination rate. The portion of Q in R p exceeds 80-90%. The contributions of R sp and R lum in R p amount to several percents. The h sp value is of 0.12-0.18 within the temperature interval of 300-450 K. Further increase in T leads to an abrupt decrease in h sp down to 0.06 at 517 K.

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Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure

et al. 2008

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Theoretical analysis of the effect of amplified luminescence on the modulation response of laser diodes

Cited by 7 publications

References 16 publications

Dynamics of polarization switching in single-mode injection semiconductor lasers

Dynamics of polarization switching in single-mode injection semiconductor lasers

Study of Laser Threshold Temperature Sensitivity in Optically Pumped GaN Epilayers

Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure

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