Abstract-An electrodeless measurement technique of complex dielectric permittivity of high-K dielectric films is described. The technique is based on a quasi-optic Fabry-Perot resonator and modified for investigation of two-layer dielectric structures -substrate/K-film. This procedure is destined to be used for providing a simple intermediate control of parameters of high-K films before the following technological process. Regimes of measurements providing the most sensitive conditions for definition of film parameters are considered. The proposed method is tested on two-layer structures with wellknown parameters and is used for characterization of ferroelectric (Ba,Sr)TiO 3 films in the millimeter wavelength range (∼ 50 GHz).

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Abstract-An approach to separate the metallic and dielectric losses in ferroelectric capacitors in all range of tuning under control dc voltages (U dc ) is considered. The procedure is based on measurements of the dc voltage dependencies of microwave losses (tan δ t (U dc )) and capacitance (C(U dc )) for a set of capacitors with similar layout but with different nominals. Linear extrapolation of tan δ t (C) dependencies at different control dc voltages to C = 0 allows to evaluate the dielectric losses tan δ d as a function of the control dc voltage. The procedure of separation was performed for a set of sandwich metal/(Ba 0.5 Sr 0.5 )TiO 3 /metal capacitors. Capacitors parameters were measured at a frequency of 2 GHz in a range of electric field strength in ferroelectric of E = (0 − 30) V/µm. The intrinsic commutation quality factor of BSTO film itself was estimated by the method proposed.