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It has been shown that photo-assisted VPE (radiation source He-Cd laser hν=2.807eV, P=0.8mW/cm2) at low substrate temperatures (170-350°C) and big temperature gradient (200-250°C/cm) gives results in extremely pure layers II-VI materials such as ZnSe/(100). Using this technology the single quantum well (SQW) structures of ZnS-ZnSe-ZnS/GaAs(100) type and ZnS/ZnSe/GaAs (100) superlattices (SL) have been grown for the first time. Reflection and photoluminescence spectra of the obtained structures have been studied.

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