A novel and simple chemical method based on sol-gel processing was proposed to deposit metastable orthorhombic tin oxide (SnOx) thin films on glass substrates at room temperature. The resultant samples are labeled according to the solvents used: ethanol (SnO-EtOH), isopropanol (SnO-IPA) and methanol (SnO-MeOH). The variations in the structural, morphological and optical properties of the thin films deposited using different solvents were characterized by X-ray diffraction, atomic force microscopy, Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy, UV-vis spectroscopy and photoluminescence (PL) analysis. The XRD patterns confirm that all the films, irrespective of the solvents used for preparation, were polycrystalline in nature and contained a mixed phases of tin (II) oxide and tin (IV) oxide in a metastable orthorhombic crystal structure. FTIR spectra confirmed the presence of Sn=O and Sn-O in all of the samples. PL spectra showed a violet emission band centered at 380 nm (3.25 eV) for all of the solvents. The UV-vis spectra indicated a maximum absorption band shown at 332 nm and the highest average transmittance around 97% was observed for the SnO-IPA and SnO-MeOH thin film samples. The AFM results show variations in the grain size with solvent. The structural and optical properties of the SnO thin films indicate that this method of fabricating tin oxide is promising and that future work is warranted to analyze the electrical properties of the films in order to determine the viability of these films for various transparent conducting oxide applications.
Sputtering has been well-developed industrially with singular ambient gases including neutral argon (Ar), oxygen (O2), hydrogen (H2) and nitrogen (N2) to enhance the electrical and optical performances of indium tin oxide (ITO) films. Recent preliminary investigation into the use of combined ambient gases such as an Ar+O2+H2 ambient mixture, which was suitable for producing high-quality (low sheet resistance and high optical transmittance) of ITO films. To build on this promising preliminary work and develop deeper insight into the effect of ambient atmospheres on ITO film growth, this study provides a more detailed investigation of the effects of ambient combinations of Ar, O2, H2 on sputtered ITO films. Thin films of ITO were deposited on glass substrates by DC magnetron sputtering using three different ambient combinations: Ar, Ar+O2 and Ar+O2+H2. The structural, electrical and optical properties of the three ambient sputtered ITO films were systematically characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy, four probe electrical conductivity and optical spectroscopy. The XRD and Raman studies confirmed the cubic indium oxide structure, which is polycrystalline at room temperature for all the samples. AFM shows the minimum surface roughness of 2.7 nm for Ar+O2+H2 sputtered thin film material. The thickness of the films was determined by the cross sectional SEM analysis and its thickness was varied from 920 to 817 nm. The columnar growth of ITO films was also discussed here. The electrical and optical measurements of Ar+O2+H2 ambient combinations shows a decreased sheet resistance (5.06 ohm/□) and increased optical transmittance (69%) than other samples. The refractive index and packing density of the films were projected using optical transmission spectrum. From the observed results the Ar+O2+H2 ambient is a good choice to enhance the total optoelectronic properties of the ITO films. The improved electrical and optical properties of ITO films with respect to the Ar+O2+H2 ambient sample were discussed in detail. In addition, the physical properties were also discussed with the influence of this ambient combination with respect to Ar, Ar+O2 and Ar+O2+H2.
This paper describes a simple, low-temperature and cost effective chemical precipitation method in aqueous media to synthesis uniformly distributed zinc oxide (ZnO) microstructures for the fabrication of dye-sensitized solar cells (DSSCs). The size and morphology of the ZnO microstructures are systematically controlled by adjusting the concentration of the precursors, zinc acetate dihydrate and ammonium hydroxide. X-ray diffraction (XRD) and scanning electron microscopy (SEM) are used for the structural characterizations and photoluminescence and Fourier transform infrared spectroscopy are used to characterize the optical properties of the ZnO, respectively. The results reveal that ZnO crystallites exhibit hexagonal wurtzite structure with preferential orientation along c-axis. The effect of ammonia concentration on the crystallinity, morphology and optical properties of ZnO microstructures and the concomitant effect on the efficiency of dye-sensitized solar cells is also quantified. The peanut-shaped ZnO microstructure, which was found to increase DSSCs performance over other microstructure, is studied in detail in order to develop a formation mechanism. A sandwich type eosin yellow sensitized solar cell is prepared using peanut-shaped ZnO microstructures, which showed an efficiency of 0.37%. Ammonia was found to play a crucial role in the evolution of ZnO morphologies. These results are promising and provide a path towards low-cost highperformance DSSCs based on peanut-shaped ZnO microstructures and produced with only relatively simple wet chemistry synthesis.
Articles you may be interested inEffect of high-energy electron beam irradiation on the properties of ZnO thin films prepared by magnetron sputtering Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination Abstract. Zinc oxide thin films deposited on glass and p-type silicon (100) substrates by DC reactive magnetron sputtering are reported here. The XRD investigations confirmed that the thin films deposited by this technique have hexagonal wurtzite structure. AFM results present the surface morphology and roughness of the deposited thin films. From the optical absorption spectrum, the band gap of the thin film is found to be ~ 3.2 eV. The photoluminescence spectrum of the sample has an UV emission peak centered at 407 nm with broad visible emission in the range of 500-580 nm.
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