We investigate the static and dynamical behavior of one-dimensional interacting fermions in disordered Hubbard chains contacted to semi-infinite leads. The chains are described via the repulsive Anderson-Hubbard Hamiltonian, using static and time-dependent lattice density-functional theory. The dynamical behavior of our quantum transport system is studied using an integration scheme available in the literature, which we modify via the recursive Lanczos method to increase its efficiency. To quantify the degree of localization due to disorder and interactions, we adapt the definition of the inverse participation ratio to obtain an indicator which is suitable for quantum transport geometries and can be obtained within density-functional theory. Lattice density-functional theories are reviewed and, for contacted chains, we analyze the merits and limits of the coherent-potential approximation in describing the spectral properties, with interactions included via lattice density-functional theory. Our approach appears to be able to capture complex features due to the competition between disorder and interactions. Specifically, we find a dynamical enhancement of delocalization in the presence of a finite bias and an increase of the steady-state current induced by interparticle interactions. This behavior is corroborated by results for the time-dependent densities and for the inverse participation ratio. Using short isolated chains with interaction and disorder, a brief comparative analysis between time-dependent density-functional theory and exact results is then given, followed by general concluding remarks.

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We present a complete Monte Carlo simulation of the transport properties of a Si/SiGe quantum well. The scattering mechanisms, viz. intervalley phonons, acoustic phonons, interface roughness and impurity scattering (including resonant scattering), are considered in detail, and we derive analytic expressions for the scattering rates, in each case properly taking the quantized electron wave functions into account. The numerically obtained distribution function is used to discuss the influence of each scattering mechanism for different electric fields applied parallel to the interfaces and also different temperatures.

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