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A procedure is described for measuring the complex permittivity of dielectric thin films with relatively large dielectric constants (ε: about 10 2 -10 4 ) and considerable losses (tan δ: about 10 −3 -1). The ferroelectric films studied here are deposited on a relatively low-ε dielectric substrate and placed in the centre of a rectangular waveguide parallel to the direction of wave propagation. The dielectric constants and losses of thin films are determined not by the shift of the resonant peak, but by numerical analysis of measured scattering parameters using a vector network analyser. The proposed method does not require electrode deposition on the film surface, and provides the natural properties of the film without complications due to conductive electrodes and their interfaces.

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We devised a measurement method of microwave dielectric constants of dielectric thin films without applying electrodes. The method uses a rectangular waveguide in which the dielectric thin films prepared on a substrate are filled vertically at the center. The frequency dependence of S-parameter measured by network analyzer enables us to calculate the dielectric constant and loss factor of the films at the microwave region through simulation. We prepared Ba0.6Sr0.4TiO3 thin films on (001) MgO single crystal substrate by pulsed laser deposition (PLD), and determined their dielectric constant and loss factor at ∼10GHz using this method.