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In this study, we demonstrate the thermal-stable characteristics of a metamorphic double -doped heterostructure field-effect transistor (MDDFET). The variations in drain current density and extrinsic transconductance of the studied device are as low as +0.3 and À2:5% from 300 to 420 K. When the temperature increases from 360 to 380 K, positive changes of transconductance and drain current are observed, which is different from that observed in most FETs. The thermal-stable characteristics can be attributed to the coupled wave function, inducing a larger carrier distribution in the undoped high-speed In 0:6 Ga 0:6 As region of the In 0:5 Ga 0:5 As/ þ /In 0:5 Ga 0:5 As/In 0:6 Ga 0:4 As/In 0:5 Ga 0:5 As/ þ /In 0:5 Ga 0:5 As channel when temperature increases.

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