Regardless of the widely accepted opinion that there is no Raman signal from single-layer graphene when it is strongly bonded to a metal surface, we present Raman spectra of a graphene monolayer on Ni(111) and Co(0001) substrates. The high binding energy of carbon to these surfaces allows formation of lattice-matched (1 × 1) structures where graphene is significantly stretched. This is reflected in a record-breaking shift of the Raman G band by more than 100 cm relative to the case of freestanding graphene. Using electron diffraction and photoemission spectroscopy, we explore the aforementioned systems together with polycrystalline graphene on Co and analyze possible intercalation of oxygen at ambient conditions. The results obtained are fully supported by Raman spectroscopy. Performing a theoretical investigation of the phonon dispersions of freestanding graphene and stretched graphene on the strongly interacting Co surface, we explain the main features of the Raman spectra. Our results create a reliable platform for application of Raman spectroscopy in diagnostics of chemisorbed graphene and related materials.

Using photoelectron diffraction and spectroscopy, we explore the structural and electronic properties of the hexagonal boron nitride (h-BN) monolayer epitaxially grown on the Co(0001) surface. Perfect matching of the lattice parameters allows formation of a well-defined interface where the B atoms occupy the hollow sites while the N atoms are located above the Co atoms. The corrugation of the h-BN monolayer and its distance from the substrate were determined by means of R-factor analysis. The obtained results are in perfect agreement with the density functional theory (DFT) predictions. The electronic structure of the interface is characterized by a significant mixing of the h-BN and Co states. Such hybridized states appear in the h-BN band gap. This allows to obtain atomically resolved scanning tunneling microscopy (STM) images from the formally insulating 2D material being in contact with ferromagnetic metal. The STM images reveal mainly the nitrogen sublattice due to a dominating contribution of nitrogen orbitals to the electronic states at the Fermi level. We believe that the high quality, well-defined structure and interesting electronic properties make the h-BN/Co(0001) interface suitable for spintronic applications.

Recrystallization of bulk materials is a well-known phenomenon, which is widely used in commercial manufacturing. However, for low-dimensional materials like graphene, this process still remains an unresolved puzzle. Thus, the understanding of the underlying mechanisms and the required conditions for recrystallization in low dimensions is essential for the elaboration of routes towards the inexpensive and reliable production of high-quality nanomaterials. Here, we unveil the details of the efficient recrystallization of one-atom-thick pure and boron-doped polycrystalline graphene layers on a Co(0001) surface. By applying photoemission and electron diffraction, we show how more than 90% of the initially misoriented graphene grains can be reconstructed into a well-oriented and single-crystalline layer. The obtained recrystallized graphene/Co interface exhibits high structural quality with a pronounced sublattice asymmetry, which is important for achieving an unbalanced sublattice doping of graphene. By exploring the kinetics of recrystallization for native and B-doped graphene on Co, we were able to estimate the activation energy and propose a mechanism of this process.

In-plane heterostructures of hexagonal boron nitride (h-BN) and graphene (Gr) have recently appeared in the focus of material science research owing to their intriguing and tunable electronic properties. However, disclosure of the atomic structure and properties of one-dimensional heterojunctions between Gr and h-BN domains remains a largely unexplored and challenging task. Here, we report an approach to obtain a perfectly oriented and atomically thin hybrid h-BN–Gr heterolayer on the Co(0001) surface. A perfect matching of the lattice parameters ensures an epitaxial growth of both Gr and h-BN on the close-packed Co surface. High crystalline quality of the resulting interface allowed us to uncover the structural and electronic properties of the lateral h-BN/Gr heterojunctions by means of complementary microscopic and spectroscopic techniques. In particular, we established the coexistence of two types of zigzag boundaries made of B–C bonds, while the boundaries with N–C bonds were found to be unfavorable. Observation of spin-polarized edge states at the C-zigzag edges of Gr domains allowed us to determine the atomic structure of C-BN heterojunctions with scanning tunneling microscopy.

We used x-ray photoemission and absorption spectroscopies to study the influence of thermal molecular oxygen exposure on the h-BN/Co(0001) and h-BN/Au/Co(0001) systems. The spectral analysis was supported by density functional theory calculations. It is shown that oxygen can intercalate h-BN on Co(0001) and also be embedded into its lattice, replacing the nitrogen atoms. Upon substitution, the structures containing one (BN 2 O) and three (BO 3 ) oxygen atoms in the boron atom environment are formed predominantly. In the case of gold-intercalated h-BN, only the (BN 2 O) structures are formed; the long-lasting oxygen exposures lead to etching of the h-BN layer.