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The progress of modern nanoelectronics, optoelectronics, nanophotonics, and microoptics is determined mainly by nanolithography advances. The electron beam lithography tools possessing a few nanometers resolution and good flexibility have a good outlook for creation of devices of this type. From the electron beam lithography tools only tools with sharp focused beam may be used for pattern generation over nanoscale area, but the writing speed thereof may decrease dramatically as the beam diameter d is reduced as d --6 over this area. The theoretical analysis showed that the application of electron beam monochromator could not only improve resolution, but increase also the beam current over the minimum diameter area. Numerical modeling of heating process under scanning by electron beam is performed also to fit the electron lithography systems and scanning electron microscopy. Areas of safe work with sensitive to heating samples are determined. A conditions and prospects of development of the various electron beam lithography systems are considered. The achievements of electron beam lithography are compared with success in the field of other lithography techniques.

The power semiconductor device making by employment of electron-beam lithography is considered. The ZBA-21 tool with modified data system was applied for lithography. Our exposure strategy was developed for increase of writing speed. The analytical solution for the optimum beam size was obtained, and the lower limit of maximum beam size has been calculated for layouts of power semiconductor devices. A new translation program dividing layout on standard figures was used. At the output this program gives the rectangles having widths with divisible sizes. The maximum beam size is chosen as greater common divisor of these sizes. This strategy permits to use the beam current more effective, to decrease waste time on dynamic focusing, and to smooth the temperature field. The making of static induction thyristor by employment of electronbeam lithography is cited as an example. The reproducibility of element's sizes on wafer has been investigated.

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