2inch size Ce1%:Gd 3 (Al 1-x Ga x) 5 O 12 (GAGG) single crystals with various Ga concentration of x=2, 2.4, 2.7 and 3 were grown by the Czochralski (Cz) method. Light yield has maximum value of 58000 photon/MeV at x=2.7 Ga concentration. Energy resolution was improved with decreasing Ga concentration and x=2.4 sample showed best energy resolution of 4.2%@662keV. The dependence of scintillation properties on crystal structure and AlGa was discussed.

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The 3 inch size Ce1%:Gd 3 Al 2 Ga 3 O 12 single crystals were prepared by the Czochralski (Cz) method. Optical constants were measured. Chemical composition analysis and uniformity of scintillation decay and light yield along growth direction were evaluated. The timing resolution measurement for a pair of 3x3x3mm 3 size Ce:GAGG scintillator crystals was performed using Si-PMs.

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