Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on semi-insulating (010) β-Ga2O3 and (0001) Al2O3 substrates. Films deposited on β-Ga2O3 showed single crystal, homoepitaxial growth as determined by high resolution transmission electron microscopy and x-ray diffraction. Corresponding films deposited on Al2O3 were mostly single phase, polycrystalline β-Ga2O3 with a preferred (201¯) orientation. An average conductivity of 732 S cm−1 with a mobility of 26.5 cm2 V−1 s−1 and a carrier concentration of 1.74 × 1020 cm−3 was achieved for films deposited at 550 °C on β-Ga2O3 substrates as determined by Hall-Effect measurements. Two orders of magnitude improvement in conductivity were measured using native substrates versus Al2O3. A high activation efficiency was obtained in the as-deposited condition. The high carrier concentration Ga2O3 thin films achieved by pulsed laser deposition enable application as a low resistance ohmic contact layer in β-Ga2O3 devices.

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Conductive homoepitaxial Si-doped β-Ga2O3 films were fabricated by pulsed laser deposition with an as-deposited 2323 S cm−1 conductivity (resistivity = 4.3 × 10−4 Ω-cm, carrier concentration = 2.24 × 1020 cm−3, mobility = 64.5 cm2 V−1 s−1, and electrical activation efficiency = 77%). High quality homoepitaxial films deposited on commercial (010) Fe-compensated β-Ga2O substrates were determined by high-resolution transmission electron microscopy and x-ray diffraction. The β-Ga2O3 films have ∼70% transparency from 3.7 eV (335 nm) to 0.56 eV (2214 nm). The combination of high conductivity and transparency offers promise for numerous ultrawide bandgap electronics and optoelectronic applications.