High-quality ZnO films are receiving increased interest for use in low-loss high-frequency surface acoustic wave (SAW) devices, acousto-optic and optical modulators, as buffer layers for III-nitride growth, and as the active material in ultraviolet solid state lasers. In this work, high quality epitaxial ZnO films were grown on R-plane sapphire substrates by metalorganic chemical vapor deposition. The structural, piezoelectric, and optical properties of the ZnO films on R sapphire have been investigated. The epitaxial relationship between ZnO and R-Al2O3 was found to be (112̄0) ZnO∥(011̄2) Al2O3, and [0001] ZnO∥[01̄11] Al2O3. The interface between as-grown ZnO and R sapphire was atomically sharp and semicoherent, as evaluated by transmission electron microscopy. On annealing the films at temperatures above 850 °C, a solid state reaction occurred between ZnO and Al2O3, resulting in the formation of ZnAl2O4 (spinel) at the interface. A 15–20 nm spinel layer formed when the ZnO film was annealed at 850 °C for 30 min, whereas a 150 nm layer formed when the film was annealed at 1000 °C for 150 min. To prevent this reaction from occurring, the maximum process temperature should be below 750 °C. The surface acoustic wave properties of the piezoelectric ZnO were evaluated by fabricating SAW devices on (112̄0) ZnO/(011̄2) Al2O3. An effective electromechanical coupling coefficient, keff2, of 6% was achieved for a 1.5 μm thick ZnO film, which is close to the value for bulk single-crystal ZnO. The photoluminescence spectra were obtained both at room temperature and at 11 K. The full width at half maximum of the 3.363 eV band edge emission photoluminescence peak measured at 11 K was 6 meV, which is close to that for single-crystal ZnO. We also evaluated the anisotropic absorption characteristics of the (112̄0) ZnO film, which can be used for a high contrast ultraviolet light modulator.

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Using a high shear melt-processing method, graphene-reinforced polymer matrix composites (G-PMCs) were produced with good distribution and particle-matrix interaction of bi/trilayer graphene at 2 wt. % and 5 wt. % in poly etheretherketone (2Gn-PEEK and 5Gn-PEEK). The morphology, structure, thermal properties, and mechanical properties of PEEK, 2Gn-PEEK and 5 Gn-PEEK were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), differential scanning calorimetry (DSC), thermal gravimetric analysis (TGA), flexural mechanical testing, and dynamic mechanical analysis (DMA). Addition of graphene to PEEK induces surface crystallization, increased percent crystallinity, offers a composite that is thermally stable until 550 °C and enhances thermomechanical properties. Results show that graphene was successfully melt-blended within PEEK using this method.