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Thin films of AlxGa1−xN (0.05 ≤ x ≤ 0.96) having smooth surfaces were deposited directly on both vicinal and on-axis 6H-SiC(0001) substrates. Cross-sectional TEM of Al0.13Ga0.87N revealed stacking faults near the SiC/Nitride alloy interface and numerous threading dislocations. EDX, AES and RBS were used to determine the compositions, which were paired with their respective CL near band-edge emission energies. A negative bowing parameter was determined. The CL emission energies were similar to the bandgap energies obtained by SE. FE-AES of the initial growth of Al0.2Ga0.8N revealed an aluminum rich layer near the interface. N-type (silicon) doping was achieved for AlxGa1−xN for 0.12 ≤ x ≤ 0.42. Al0.2Ga0.8N/GaN superlattices were fabricated with coherent interfaces. Additionally, HEMT structures using an AlN/GaN/AlN buffer structure were fabricated.

Raman analysis of the E2 mode of Al x Ga 1Ϫx N in the composition range 0рxр1 is presented. The line shape was observed to exhibit a significant asymmetry and broadening toward the high energy range. The spatial correlation model is discussed, and is shown to account for the line shape. The model calculations also indicate the lack of a long-range order in the chemical vapor deposition alloys. These results were confirmed by x-ray scattering: the relative intensity of the superlattice line was found to be negligible. The line broadening of the E2 mode was found to exhibit a maximum at a composition xХ0.5 indicative of a random disordered alloy system.

AlN and GaN epitaxial heterojunctions on 6H-SiC(0001): Valence band offsets and polarization fields