Embedding quantum dots in nanowires (NWs) constitutes one promising building block for quantum photonic technologies. Earlier attempts to grow InAs quantum dots on GaAs nanowires were based on the Stranski–Krastanov growth mechanism. Here, we propose a novel strain-driven mechanism to form 3D In-rich clusters on the NW sidewalls and also on the NW top facets. The focus is on ternary InGaAs nanowire quantum dots which are particularly attractive for producing single photons at telecommunication wavelengths. In(Ga)As clusters were realized on the inclined top facets and also on the {11-2} corner facets of GaAs NW arrays by depositing InAs at a high growth temperature (630 °C). High-angle annular dark-field scanning transmission electron microscopy combined with energy-dispersive x-ray spectroscopy confirms that the observed 3D clusters are indeed In-rich. The optical functionality of the as-grown samples was verified using optical technique of cathodoluminescence. Emission maps close to the NW tip shows the presence of optically active emission centers along the NW sidewalls. Our work illustrates how facets can be used to engineer the growth of localized emitters in semiconducting NWs.

State-of-the art models for statistical properties within the nanowire ensembles consider influx of precursors, reflection and surface diffusion of adatoms. These models predict a delay in the nanowire growth start and the evolution toward an asymmetric length distribution. We demonstrate here the effect of desorption of the nanowire material, which has not been considered so far in studies of the nanowire length distributions. We show that at the very beginning of growth the length distribution should be asymmetric due to the slow nucleation of nanowires. At longer times, the length distribution acquires a symmetric Gaussian shape due to the increased weight of desorption. The width of this distribution is larger than Poissonian and increases for higher ratio of desorption over deposition rate. Our model is consistent with the length evolution of organized self-catalyzed GaAs nanowires. We outline that desorption of the nanowire material should be minimized to achieve arrays of highly identical nanowires. These results are relevant for a wide variety of material systems.