No abstract

We investigated Al 2 O 3 atomic layer deposition growth layer for encapsulation of organic light emitting diodes (OLEDs). It was found that surface properties of these O 3 -based Al 2 O 3 were superior to those of H 2 O based Al 2 O 3 grown at relative higher temperatures. Therefore, the water vapor transmission rate of ∼60 nm thick Al 2 O 3 films can be reduced from 4.9 × 10 −4 g/(m 2 day) (80 °C−H 2 O) to 8.7 × 10 −6 g/(m 2 day) (80 °C−O 3 ) under a controlled environment of 20 °C and relative humidity of 60%. Besides, the OLEDs integrated with 80 °C−O 3 based Al 2 O 3 film were undamaged, and their luminance decay time was altered to a considerable extent.