In this work, high-crystalline Ga 2 O 3 nanorods with improved photoelectrochemical properties were fabricated on Ti substrates by a facile electrodeposition. The photocurrent density of oval-like Ga 2 O 3 nanorods is 122.4 uA cm À 2 at 0.6 V vs. Ag/AgCl, which is much higher than that of rectangular Ga 2 O 3 nanorods (69 uA cm À 2 ). This enhancement in performance might be ascribed to the decreased bandgap energy, which greatly promotes its oxidation ability of photogenerated hole.