Facile Fabrication of Ga₂O₃ Nanorods for Photoelectrochemical Water Splitting

Abstract

In this work, high-crystalline Ga 2 O 3 nanorods with improved photoelectrochemical properties were fabricated on Ti substrates by a facile electrodeposition. The photocurrent density of oval-like Ga 2 O 3 nanorods is 122.4 uA cm À 2 at 0.6 V vs. Ag/AgCl, which is much higher than that of rectangular Ga 2 O 3 nanorods (69 uA cm À 2 ). This enhancement in performance might be ascribed to the decreased bandgap energy, which greatly promotes its oxidation ability of photogenerated hole.

Theoretical screening of single atom doping on β-Ga2O3 (100) for photoelectrochemical water splitting with high activity and low limiting potential

“…13 He et al synthesized Ga 2 O 3 nanorods with an oval-like profile, which possessed enhanced performance than high-crystalline Ga 2 O 3 nanorods with a photo-current density of 122.4 μA cm −2 at 0.6 V vs. Ag/AgCl. 14 These studies demonstrate that Ga 2 O 3 is a promising material for photoelectrodes in PEC. However, the inherent drawbacks of Ga 2 O 3 is that its wide band gap (4.8 eV) makes it sensitive to only UV region of the solar spectrum and the recombination of photogenerated electrons and holes, which were also the issues highlighted in the aforementioned experiments.…”

“…The overpotentials of OER (η OER ) are summarized in Fig. 2c, as calculated by eqn (14). Among all doping structures, it can be seen that Rh doped β-Ga 2 O 3 shows relatively best OER activity with the lowest OER overpotential (η OER = 0.50 V).…”