Abstruc#-MOSFETswith 70-110A thick furnace N20-annealed gate oxides are examined at both room and liquid nitrogen temperatures. The N 2 0 anneal not only improves device performance, e.g. by increasing the high normal field mobility and current drivability, but it also suppresses degradation induced by Fowler-Nordheim and channel hot-carrier injection. Random telegraph noise measurements reveal a possible correlation between the interface properties and the mobility. OPM 95lPcmW m J W

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