Based on TCAD (Technology Computer Aided Design), single event effect of SRAM is simulated by using mixed-mode simulation module of heavy ion, in which the key NMOS is modeled in 3D for commercial 40 nm technology. Analyzing of the influence of several important heavy ion incidence factors, the linear energy transfer (LET), the incidence location and the incidence angle are executed. The results indicate that the variation of key parameters in 40 nm technology matches well with that in traditional technology. Moreover, the simplified R-C mixed-mode simulation module is proposed. Two modules are compared and showed good matching in each node of the voltage and current. So it is valid to use this module to analysis the single event effect of SRAM.

In this paper, analysis of SET pulse effects on circuits have been carried on, and an evaluation model is proposed. This model allows us to calculate a node's SET pulse width, as a function of the collected charge and the gates' sizes composing the driving and fan-out logic. A SET simulation is taken with 130nm CMOS process and the result demonstrates the maximal error rate between the measure results by using HSPICE simulation and the calculating results by using this model is almost 6.89%. This developed approach avoids time-costly electrical level simulation under a given technology and power supply, thus implementing great efficiency and speed.

Based on the 3D TACD simulation, by building and simulating 90nm dual-well CMOS device under heavy ion radiation with different distance between strike position and the drain, researching the influence to NMOS, PMOS, SRAM threshold LET and the critical charge. For NMOS, with the increase of the distance, bipolar amplification effect will reduce influence even make no difference. The situation in PMOS is as same as the condition of a directly strike on drain, and the bipolar amplification effect increases the charge collection efficiency. Meanwhile, as the distance increases, the threshold LET and the critical charge of SRAM while increase.

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