The silver seed on silicon was prepared through aqueous HF and AgNO 3 solution at room temperature. In order to explore the formation process of silver seed on silicon, the methods of open circuit potential with time (OCP-t), anodic stripping sweep voltammetry (ASV) and scanning tunneling microscope (STM) were used in this work. The procedure of silver nucleus growing into large particles was explained by electro-negativity. The growth mechanism of silver seed on silicon has been presented: at first, the silver monolayer and multilayer firstly grows onto silicon without fully covering the surface at the expense of silicon etching due to the silver seed attracting the electron from silicon, after that, the monolayer coalesces together, forming continuous grain film with some silver atoms diffusing into the silicon and the multilayer still grows thick simultaneously.
A simple method was developed for the preparation of W-doped Ag dendrites by using electroless deposition from hydrofluoride solution. The samples characterized by XPS, XRD, SEM and TEM techniques, show that the growth of silver is leading and can not be changed essentially by tungstate ions in the Ag-W binary system. A doping mode of W element was proposed, i.e., the doping of W may occur during silver deposition through chemisorption-chemical bonding of oxygen atoms of tungstate dimer with silver. Cyclic voltammetry was employed to determine the chemical bonding energy between silver and oxygen.
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