The polysilicon nanofilms have significant piezoresistive characteristics. In this paper, an analysis of tunneling piezoresistive effect of p-type polysilicon nanofilms is presented based on the experimental data. The analysis results show that the tunneling piezoresistive effect is much remarkable than piezoresistive effect of neutral region, and the former is about 1.3 to 1.5 times of the latter. The higher is doping concentration, the more remarkable tunneling piezoresistive effect is. This advantage can be utilized to improve the temperature characteristics of polysilicon piezoresistive sensor.

In this paper a fourth-order single-loop sigma-delta modulator applied in micro-gyroscope is designed. The modulator system chose the fully feedforword structure. The signal bandwidth is 200KHz, oversampling ratio is 64 and sampling frequency is 25.6MHz. By system simulation result in Matlab, the signal to noise ratio (SNR) is 92.3dB and effective number of bits (ENOB) is 15.03bits. The whole circuit of modulator is designed and simulated in Cadence Spectre. It is gotten that the SNR is 78.6dB and changes linearly with input level. When input level is bigger than -4dBFs, the modulator becomes overload.

The gauge factor and nonlinearity of 80nm polysilicon nanofilms with different doping concentration were tested. The experimental results show that, from 8.1×1018cm-3 to 2.0×1020cm-3, the gauge factors first increase then decrease, which like the common polysilicon films (thickness is larger than 100nm). From 2.0×1020cm-3 to 7.1×1020cm-3, the gauge factors do not change with doping concentration almost, which can be explained by tunneling piezoresistive theory. When doping concentration is low than 4.1×1019cm-3, the nonlinearities are big, and the nonlinearities become small when doping concentration is high than 4.1×1019cm-3. The nonlinearity is related to the occupied condition of trapping states in grain boundary. The longitudinal gauge factor and nonlinearity are smaller than transverse ones. Take the gauge factor and nonlinearity both into consideration, the optimal doping concentration should be 4.1×1019cm-3. The conclusions are very useful for design and fabrication of polysilicon nanofilms piezoresistive sensor.

This paper researches on the temperature effects of a fully-symmetrical micromachined gyroscope. The Young’s modulus and thermal expansion coefficient of silicon vary with the environment temperature, which affects the modes’ resonant frequencies of micromachined gyroscopes. The effects of temperature fluctuation on the modes’ resonant frequencies is simulated by the FEM software ANSYS. The simulation results show that the fully-symmetrical gyroscope’s resonance frequencies decrease with the increase of temperature and the decrease degree nearly 0.256Hz/°C, but the two modes’ resonance frequencies matches well. The micromachined gyroscope’s dynamic characteristics are tested. The resonant frequencies and the quality factor are reduced with the increase of temperature and the decrease degree of the fit linear about the resonant frequencies is 0.276 Hz/°C. The test results are in good accordance with the simulation results.

A nonlinearity model including distortion components for sigma-delta (ΣΔ) accelerometer that allows stability analysis is described. Based on this model, closed-loop stability and signal dependent stability are analyzed detailedly. To verify the conclusions, Matlab/Simulink model for a fourth-order ΣΔ accelerometer is designed. The simulation results indicate that high-order system needs a large compensation coefficient, and it will not affect the performance due to the very high low-frequency gain of the loop filter. High-order system is conditionally stable, and stability is affected by the input signal.