Light extraction analysis of GaN-based light-emitting diodes (LEDs) with Monte Carlo ray tracing is presented. To obtain high light extraction efficiency, periodic structures introduced on the top surface and/or on the substrate of various types of LED are simulated, including wire bonding, flip chip and Thin GaN. Micro pyramid array with an apex angle from 20o to 70o is shown to effectively improve the light extraction efficiency. In addition, for an LED encapsulated within an epoxy lens, the patterned substrate with pyramid array is found to be a more effective way to increase light extraction efficiency than the surface texture.

A single-chip white light LED is commonly modeled by considering the phosphor coating as a homogeneous Lambertian light source. However, this approach leads to an incorrect optical simulation of phosphor-coated multi-chip LEDs due to the presence of a previously unreported spatial distribution of emission spots across the phosphor layer. We introduce "weighting" factors based on position-dependent light strength across the phosphor surface in order to improve the model accuracy. Following the modeling algorithm in the mid-field region, we have built up a precise and practical optical model by using Monte Carlo ray tracing and weighting factors. We measure the LED radiation distribution at several representative distances to test the model performance. In all cases, the accuracy is higher than 99.5% in normalized cross correlation between the simulated pattern and experimental measurement.

In this paper, as to our best knowledge, we propose and demonstrate the first precise phosphor modeling scheme to simulate the chromatic performance of white LEDs with silicate phosphors. The phosphor model is useful to accurately simulate the power ratio of the blue and yellow lights emitted by the white LEDs and is important in white LED package.

Versatility in the design of optical systems is one of the key features of light-emitting diodes (LEDs) that has attracted considerable attention. In the analysis of systems using LEDs, it is useful to know if the distance is far enough from the LED to allow the radiation pattern to be simulated by the point source approach. We propose three far-zone conditions for LED light modeling: the far-field distance, and for practical purposes the quasi far-field and minimum far-field distances. Different types of LEDs have different far-field ranges. We analyze these differences by modulating key parameters like geometrical structure of encapsulating lens, chip size, chip shape, chip position, and package errors. We find that far-field region considerably depends more on the shape of both lens and chip than all other parameters.

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