No abstract

A self‐consistent calculation model combining flow field and electromagnetic wave propagation is presented. The hypersonic flow field around the RAMC‐II vehicle at different reentry heights is numerically solved using a computational fluid dynamics technique with a two‐dimensional model, and then perform self‐consistent calculations in conjunction with electromagnetic wave propagation models. The dependence of wave frequency, polarization mode, incident angle, and plasma collision frequency on the wave propagation is presented. Electromagnetic wave propagation characteristics have been investigated experimentally with shock tube, and the experimental results are consistent with the simulation results. Conclusions in this article can be the foundation to study the interactions between the electromagnetic wave and the realistic reentry plasma sheath.

A 2D drift diffusion fluid model was employed to study the plasma uniformity of different capacitively coupled plasma (CCP) in argon discharges based on the COMSOL platform. The numerical results show that compared with the traditional CCP device that discharges between plates, the plasma uniformity of CCP device discharge by inner capacitors (CCP-ICD) has been significantly improved overall. Then, the influence of the number of capacitors and the capacitor spacing on the plasma uniformity of CCP-ICD was analyzed. The plasma uniformity can reach 89.5% in the radial direction under the best parameters, but the electron number density is reduced by an order of magnitude. In order to obtain a CCP source with high density and better uniformity, a new multi-directional source CCP-ICD was designed and numerically analyzed. The simulation results show that the new multi-directional source CCP-ICD can improve the uniformity in both radial and axial directions by about 40% without reducing the plasma density. The above conclusions show that the multi-directional source CPP-ICD device designed in this paper has great application prospects in the microelectronic and semiconductor industries.

No abstract

No abstract