Laser technology has been applied in more and more areas of research. With its fast growth, faster and cheaper solution can be found in different industries. In this paper we present two applications of laser on LED and semi-conductor manufacturing. A new approach facilitated by laser micromachining for improving LED efficiency is introduced first. This is through change of stacking structure and the precision of up-to-date UV 355nm laser technology. The illumination area is increased due to the smaller connecting area (drilling size). Another work is the improving of leakage current of TiO2 film as dielectrics. Through the irradiation of 532nm DPSS laser the refractive index increases and the current leakage is reduced.
Moore’s law by scaling conventional CMOS involves huge lots of technology evolution in both aspects of electronics material and micromachining. One of the most promising modern innovations is the 3D IC and the key material to the 3D IC is the low-K (dielectric) materials. Since the new generation low-K material is rather porous and fragile in structure strength, conventional singulation methods including the dicing saw and nano-second laser can not be applied. New machine modality has to be used to avoid the cracking and excessive debris contamination. In this paper we demonstrate the application of pico-second laser on the grooving machining of low-K wafer. The results show that the removal of low-K material is up to the production standard: smooth groove bottom with minimal debris. However, as the groove line involves metal pads the laser power is partially consumed by the ablation of the metallic material the depth is not controlled ideally. With proper adjustment of the machine parameter such as laser power, focal depth and pulse energy the problem can be resolved.
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