Mo/NdFeB/Mo thin flms were deposited by dc-magnetron sputtering onto Si substrates, then were annealed at 650 °C for 30 min. Nanostructured Mo/NdFeB/Mo films were successfully obtained with the magnetic easy axis of NdFeB perpendicular to the film plane. It was found that the c-axis orientation depends on the NdFeB sputter power. Good c-axis orientation was obtained at 40W NdFeB sputter power. Meanwhile, Mo layer can not only induce the c-axis orientation of NdFeB, but also improve the crystallization of NdFeB grains.

Hot compression tests of AZ91D magnesium alloy were performed on Gleeble1500 ranging from 0.001 to 1 s-1 and deformation temperature ranging from 200 to 400°C. The results show that flow stress is dependent on deformation temperature and strain rates．When strain rate is a constant, flow stress decreases with the increasing deformation temperature. Meanwhile, as deformation temperature is a constant, flow stress increases with the increase of strain rate, which can be demonstrated by a Zener-hollomon parameter in the hyperbolic-sine-type equation during hot compression deformation. The hot deformation activation energy is 176.01kJ/mol and the stress exponent is 7.85 during hot compression deformation of AZ91D magnesium alloy.

Using the plane-wave ultrasoft pseudopotential method and generalized gradient approximation which based on the first-principles density functional theory, the bond length, energy band structure and density of states of the layer of Si/Ge were calculated. The results show that, compared with the single-crystal Si layers, Si-Ge bond length get longer and the population decrease in the layer of Si/Ge . It can be seen from the energy band structure that the band structure width of the layer of Si/Ge decreases. The optical properties calculations show that, compared with the single-crystal Si layers, the absorption band of the layer of Si/Ge get narrower, and the absorption band-edge obviously get red-shift.