Defect passivation has shown an essential role in improving the efficiency and stability of perovskite solar cells (PSCs). Herein, an efficient and low-cost π-conjugated sulfamic acid additive, 4-aminobenzenesulfonic acid (4-ABSA), is used to realize durable defect passivation of PSCs. The incorporation of 4-ABSA not only constructs a compact and smooth perovskite film but is also capable of passivating both negative- and positive-charged defects derived from under-coordinated lead and halogen ions. Besides, the π-conjugated system in 4-ABSA can induce preferred perovskite crystal orientation and stabilize the coordination effect between 4-ABSA and perovskite grains. As a result, the inverted planar PSC incorporated with 4-ABSA additives demonstrates an improved power conversion efficiency (PCE) from 18.25 to 20.32%. Moreover, this 4-ABSA passivation agent also enhances the stability of devices, which retains 83.5% of its initial efficiency under ambient condition at 60 °C after 27 days. This work provides a π-conjugated sulfamic acid for durable defect passivation of perovskite optoelectronic devices.

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Laser exhibition technology has been widely used in the virtual environment of exhibitions and shows, as well as in the physical conference and exhibition centers. However, the speckle issue due to the high coherence of laser sources has caused harmful impacts on image quality, which is one of the obstacles to exhibition effects. In this paper, we design a compact Nd:YAG/PPMgLN laser module at 561.5 nm and use two different types of big-core multi-mode fibers to lower the spatial coherence. According to our experiment, the speckle contrasts relating to these two types reduce to 7.9% and 4.1%, respectively. The results of this paper contribute to improving the application effects of key optical components in the exhibitions. Only in this way can we provide technical supports and service guarantee for the development of the exhibition activities, and an immersive interactive experience for the audiences.

We fabricated Sb2Se3 thin film solar cells using tris(8-hydroxy-quinolinato) aluminum (Alq3) as an electron transport layer by vacuum thermal evaporation. Another small organic molecule of N,N’-bis(naphthalen-1-yl)-N,N’-bis(phenyl)benzidine (NPB) was used as a hole transport layer. We took ITO/NPB/Sb2Se3/Alq3/Al as the device architecture. An open circuit voltage (V oc) of 0.37 V, a short circuit current density (J sc) of 21.2 mA/cm2, and a power conversion efficiency (PCE) of 3.79% were obtained on an optimized device. A maximum external quantum efficiency of 73% was achieved at 600 nm. The J sc, V oc, and PCE were dramatically enhanced after introducing an electron transport layer of Alq3. The results suggest that the interface state density at Sb2Se3/Al interface is decreased by inserting an Alq3 layer, and the charge recombination loss in the device is suppressed. This work provides a new electron transport material for Sb2Se3 thin film solar cells.