Direct printing of functional electronic materials may provide a new route to low-cost fabrication of integrated circuits. However, to be useful it must allow continuous manufacturing of all circuit components by successive solution deposition and printing steps in the same environment. We demonstrate direct inkjet printing of complete transistor circuits, including via-hole interconnections based on solution-processed polymer conductors, insulators, and self-organizing semiconductors. We show that the use of substrate surface energy patterning to direct the flow of water-based conducting polymer inkjet droplets enables high-resolution definition of practical channel lengths of 5 micrometers. High mobilities of 0.02 square centimeters per volt second and on-off current switching ratios of 10(5) were achieved.

This is the accepted version of the paper. This version of the publication may differ from the final published version. Permanent repository link: http://openaccess.city.ac.uk/13049/ Link to published version: http://dx. Abstract We demonstrate ink-jet printing as a viable method for large area fabrication of graphene devices. We produce a graphene-based ink by liquid phase exfoliation of graphite in N-Methylpyrrolidone. We use it to print thin-film transistors, with mobilities up to∼95cm 2 V −1 s −1 , as well as transparent and conductive patterns, with∼80% transmittance and∼30kΩ/ sheet resistance. This paves the way to all-printed, flexible and transparent graphene devices on arbitrary substrates.

Light‐emitting polymers have been studied intensively as materials for light‐emitting diodes (LEDs). Here research efforts toward developing these materials for commercial applications are reviewed. The Figure shows the preferred two‐layer device structure for commercial polymer LEDs as well as polyfluorene, one of the polymers discussed.

A method is demonstrated by which liquid-crystalline self-organization in rigid-rod nematic conjugated polymers can be used to control the microstructure of the active semiconducting layer in solution-processed polymer thin-film transistors (TFTs). Enhanced charge carrier mobilities of 0.01–0.02 cm2/V s and good operating stability have been achieved in polyfluorene copolymer TFTs by preparing the polymer in a nematic glassy state and by aligning the polymer chains parallel to the transport direction with the help of an alignment layer. Mobility anisotropies of 5–8 for current flow parallel and perpendicular to the alignment direction have been observed that are of the same order of magnitude as optical dichroic ratios.

Efficient blue electroluminescence, peaked at 436 nm, is demonstrated from polymer light-emitting diodes operating at high brightness. A dioctyl-substituted polyfluorene was used as the emissive layer in combination with a polymeric triphenyldiamine hole transport layer. The luminance reaches 600 cd/m2 at a current density of 150 mA/cm2 for a bias voltage of 20 V, corresponding to an efficiency of 0.25 cd/A and a luminosity of 0.04 lm/W. These values are optimized at a critical emissive layer thickness.