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In this paper, we demonstrate a high-voltage normally-off p-GaN gate high-electron-mobility-transistor (HEMT) to realize the compatible high threshold voltage (VTH) and high drain current (ID) performance. With the optimization of epitaxial structure, VTH is significantly improved in the presented device. Meanwhile, through using the high-quality ALD-Al2O3 passivation layer, the high ID is also realized in the device because of the reduction of the access region resistance. Supported by the device fabrication, the p-GaN gate HEMT delivers a VTH=3.2 V measured by linear extrapolation, a relatively large saturation ID (ID_SAT) of 246 mA/mm, and a high break-down voltage (BV) of 1830 V at 1 mA/mm. Among various p-GaN gate HEMTs with the ID_SAT over 200 mA/mm, the fabricated device has a competitive VTH. The results suggest that the pro-posed p-GaN gate HEMT could be a promising candidate in high VTH and ID power electronics.