We developed titanium nitride (TiN) based nanoelectromechanical (NEM) switch with the smallest suspension air-gap thickness ever made to date by a “top-down” complementary metal-oxide semiconductor fabrication methods. Cantilever-type NEM switch with a 15-nm-thick suspension air gap and a 35-nm-thick TiN beam was successfully fabricated and characterized. The fabricated cantilever-type NEM switch showed an essentially zero off current, an abrupt switching with less than 3mV/decade, and an on/off current ratio exceeding 105 in air ambient. Also achieved was an endurance of over several hundreds of switching cycles under dc and ac biases in air ambient.

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As the current thin film transistors (TFTs) for driving AMOLED have been made of amorphous silicon, poly-silicon, or organic materials, they have suffered from carrier mobility-related problems. We proposed in this work a new idea of using MEMS switches as the TFTs, for achieving a better switching characteristic capable of conducting large current with high uniformity and stability. Using simulation and initial experiments with the metallic MEMS switches, we successfully demonstrated that the digital driving of OLED using MEMS switches was possible with gray scale. The fabricated 50μm × 10μm-sized switch conducted current of up to 15mA and it operated up to 1.3×10 5 Cycles in a hot switching mode in air when the current was 57μA and switching pulse frequency was 100Hz. Complete active-matrix driving of multiple OLED pixels is to be done.