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The low temperature coefficient and high linearity of the input-output characteristics are both required for high-performance microelectromechanical systems (MEMS) capacitive accelerometers. In this work, a structural designing of a bulk MEMS capacitive accelerometer is developed for both low temperature coefficient and high linearity. Firstly, the contrary effect of the wide-narrow gaps ratio (WNGR) on the temperature coefficient of the scale factor (TCSF) and linearity error is discussed. Secondly, the ability of an improved structure that can avoid the contrary effect is illustrated. The improved structure is proposed in our previous work for reducing the temperature coefficient of bias (TCB) and TCSF. Within the improved structure, both the TCSF and linearity error decrease with increasing WNGR. Then, the precise designing of the improved structure is developed for achieving lower TCB, TCSF, and linearity error. Finally, the precise structural designing is experimentally verified.

Air damping significantly influences the dynamical characteristics of MEMS accelerometers. Its effects at micro-scale level sharply depend on the structure layouts and size of MEMS devices. The damping phenomenon of comb microaccelerometers is investigated. The air between fixed plate electrodes and movable plate electrodes cannot flow freely and is compressed. The air damping, therefore, exhibits both viscous effects and stiffness effects. The former generates a drag force like that in macromechanical systems, and the damping force is proportional to the velocity of movable electrodes. The latter stiffens the rigidity of structure, and the stiffening level is related to the gap value of capacitors, internal pressure, and temperature. This paper focuses on the dependence of the squeeze film air damping on capacitor gaps. The simulation and experiments indicate that the squeeze film effect is sharply affected by the gap value when the structural dimensions decrease. And the influence of fabrication errors is considered in damping design in comb microaccelerometers.

Gap asymmetry in differential capacitors is the primary source of the zero bias output of force-balanced micro accelerometers. It is also used to evaluate the applicability of differential structures in MEMS manufacturing. Therefore, determining the asymmetry level has considerable significance for the design of MEMS devices. This paper proposes an experimental-theoretical method for predicting gap asymmetry in differential sensing capacitors of micro accelerometers. The method involves three processes: first, bi-directional measurement, which can sharply reduce the influence of the feedback circuit on bias output, is proposed. Experiments are then carried out on a centrifuge to obtain the input and output data of an accelerometer. Second, the analytical input-output relationship of the accelerometer with gap asymmetry and circuit error is theoretically derived. Finally, the prediction methodology combines the measurement results and analytical derivation to identify the asymmetric error of 30 accelerometers fabricated by DRIE. Results indicate that the level of asymmetry induced by fabrication uncertainty is about ±5 × 10−2, and that the absolute error is about ±0.2 μm under a 4 μm gap.